ACM Home Page
Please provide us with feedback. Feedback
Carbon nanotube interconnects
Full text PdfPdf (861 KB)
Source
International Symposium on Physical Design archive
Proceedings of the 2007 international symposium on Physical design table of contents
Austin, Texas, USA
SESSION: Future interconnects table of contents
Pages: 77 - 84  
Year of Publication: 2007
ISBN:978-1-59593-613-4
Authors
Azad Naeemi  Georgia Institute of Technology, Atlanta, GA
James D. Meindl  Georgia Institute of Technology, Atlanta, GA
Sponsors
ACM: Association for Computing Machinery
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
Bibliometrics
Downloads (6 Weeks): 31,   Downloads (12 Months): 186,   Citation Count: 2
Additional Information:

abstract   references   cited by   index terms   collaborative colleagues  

Tools and Actions: Request Permissions Request Permissions    Review this Article  
DOI Bookmark: Use this link to bookmark this Article: http://doi.acm.org/10.1145/1231996.1232014
What is a DOI?

ABSTRACT

Based on physical models, circuit models are presented for SWNTs, SWNT-bundles and MWNTs. These models can be used for circuit simulations and compact modeling. It is demonstrated that by customizing CNT interconnects at the local, semiglobal and global levels several major challenges facing GSI systems can potentially be addressed. For local interconnects, mono- or few-layer SWNT interconnects can offer up to 50% reduction in capacitance and power dissipation with considerable improvements in latency if they are short enough (<20μm). For semi-global interconnects, either latency or power dissipation can be substantially improved if bundles of SWNTs are used. The improvements increase as cross-sectional dimensions scale down. For global interconnects, bandwidth density can be improved significantly if MWNTs with large diameters with connections to all shells can be fabricated (up to 66% improvement for 50nm diameter MWNTs).


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
M. S. Dresselhaus, G. Dresselhaus, and P. Avouris, Carbon nanotubes: synthesis, structure, properties, and applications. Berlin; New York:: Springer, 2001.
 
2
A. P. Graham, G. S. Duesberg, W. Hoenlein, F. Kreupl, M. Liebau, R. Martin, B. Rajasekharan, W. Pamler, R. Seidel, W. Steinhoegl, and E. Unger, "How do carbon nanotubes fit into the semiconductor roadmap?," Applied Physics A: Materials Science & Processing, vol. 80, pp. 1141--1151, 2005.
 
3
P. L. McEuen, M. S. Fuhrer, and P. Hongkun, "Single-walled carbon nanotube electronics," Nanotechnology, IEEE Transactions on, vol. 1, pp. 78--85, 2002.
 
4
S. Datta, Quantum transport : atom to transistor. Cambridge, UK ; New York: Cambridge University Press, 2005.
 
5
A. A. Maarouf, C. L. Kane, and E. J. Mele, "Electronic structure of carbon nanotube ropes," Physical Review B, vol. 61, pp. 11156, 2000.
 
6
H. J. Li, W. G. Lu, J. J. Li, X. D. Bai, and C. Z. Gu, "Multichannel ballistic transport in multiwall carbon nanotubes," Physical Review Letters, vol. 95, pp. 086601-4, 2005.
 
7
A. Naeemi and J. D. Meindl, "Compact Physical Models for Multiwall Carbon-Nanotube Interconnects," Electron Device Letters, IEEE, vol. 27, pp. 338--340, 2006.
 
8
A. Javey, J. Guo, M. Paulsson, Q. Wang, D. Mann, M. Lundstrom, and H. Dai, "High-Field Quasiballistic Transport in Short Carbon Nanotubes," Physical Review Letters, vol. 92, pp. 106804-4, 2004.
 
9
W. Liang, M. Bockrath, D. Bozovic, J. H. Hafner, M. Tinkham, and H. Park, "Fabry - Perot interference in a nanotube electron waveguide," Nature, vol. 411, pp. 665--669, 2001.
 
10
O. Hjortstam, P. Isberg, S. Söderholm, and H. Dai, "Can we achieve ultra-low resistivity in carbon nanotube-based metal composites?," Applied Physics A: Materials Science & Processing, vol. V78, pp. 1175--1179, 2004.
 
11
J. Jiang, R. Saito, A. Gruneis, S. G. Chou, G. G. Samsonidze, A. Jorio, G. Dresselhaus, and M. S. Dresselhaus, "Photoexcited electron relaxation processes in single-wall carbon nanotubes," Physical Review B (Condensed Matter and Materials Physics), vol. 71, pp. 045417-9, 2005.
 
12
C. T. White and T. N. Todorov, "Carbon nanotubes as long ballistic conductors," Nature, vol. 393, pp. 240--242, 1998.
 
13
J. Jiang, J. Dong, H. T. Yang, and D. Y. Xing, "Universal expression for localization length in metallic carbon nanotubes," Physical Review B, vol. 64, pp. 045409, 2001.
 
14
E. Pop, D. Mann, J. Reifenberg, K. Goodson, and H. Dai, "Electro-thermal transport in metallic single-wall carbon nanotubes for interconnect applications," in IEEE IEDM Digst., 2005, pp. 253--256.
 
15
A. Naeemi and J. D. Meindl, "Impact of electron-phonon scattering on the performance of carbon nanotube interconnects for GSI," Electron Device Letters, IEEE, vol. 26, pp. 476--478, 2005.
 
16
M. W. Bockrath, "Carbon nanotubes: electrons in one dimension," Ph.D. Thesis, Univ. California, Berekeley, CA, 1999.
 
17
H. Stahl, J. Appenzeller, R. Martel, P. Avouris, and B. Lengeler, "Intertube Coupling in Ropes of Single-Wall Carbon Nanotubes," Physical Review Letters, vol. 85, pp. 5186, 2000.
 
18
International Technology Roadmap for Semiconductors (ITRS), 2005 ed: Semiconductor Industry Assoc., 2005.
 
19
S. M. Rossnagel and T. S. Kuan, "Alteration of Cu conductivity in the size effect regime," Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 22, pp. 240--247, 2004.
 
20
A. Naeemi, J. A. Davis, and J. D. Meindl, "Compact physical models for multilevel interconnect crosstalk in gigascale integration (GSI)," Electron Devices, IEEE Transactions on, vol. 51, pp. 1902--1912, 2004.
 
21
RAPHAEL: Interconnect Analysis Program: TMA Inc., 1996.
 
22
A. Nieuwoudt and Y. Massoud, "Understanding the Impact of Inductance in Carbon Nanotube Bundles for VLSI Interconnect Using Scalable Modeling Techniques," Nanotechnology, IEEE Transactions on, vol. 5, pp. 758--765, 2006.
 
23
J. Y. Huang, S. Chen, S. H. Jo, Z. Wang, D. X. Han, G. Chen, M. S. Dresselhaus, and Z. F. Ren, "Atomic-Scale Imaging of Wall-by-Wall Breakdown and Concurrent Transport Measurements in Multiwall Carbon Nanotubes," Physical Review Letters, vol. 94, pp. 236802-4, 2005.
 
24
M. Nihei, D. Kondo, A. Kawabata, S. Sato, H. Shioya, M. Sakaue, T. Iwai, M. Ohfuti, and Y. Awano, "Low-resistance multi-walled carbon nanotube vias with parallel channel conduction of inner shells," in Proc. IEEE Int. Interconnect Tech. Conf., 2005, pp. 234--236.
 
25
S. B. Lee, K. B. K. Teo, L. A. W. Robinson, A. S. Teh, M. Chhowalla, D. G. Hasko, G. A. J. Amaratunga, W. I. Milne, and H. Ahmed, "Characteristics of multiwalled carbon nanotube nanobridges fabricated by poly(methylmethacrylate) suspended dispersion," J. Vac. Sci. Technol. B, vol. 20, pp. 2773--2776, 2002.
 
26
K. Liu, P. Avouris, R. Martel, and W. K. Hsu, "Electrical transport in doped multiwalled carbon nanotubes," Physical Review B, vol. 63, pp. 161404, 2001.
 
27
W. Y. Jang, N. N. Kulkarni, C. K. Shih, and Z. Yao, "Electrical characterization of individual carbon nanotubes grown in nanoporous anodic alumina templates," Applied Physics Letters, vol. 84, pp. 1177--1179, 2004.
 
28
A. Naeemi, R. Sarvari, and J. D. Meindl, "On-Chip Interconnect Networks at the End of the Roadmap: Limits and Nanotechnology Opportunities," in Proc. IEEE Int. Interconnect Tech. Conf., 2006, pp. 201--203.
 
29
A. Naeemi and J. D. Meindl, "Monolayer metallic nanotube interconnects: promising candidates for short local interconnects," Electron Device Letters, IEEE, vol. 26, pp. 544--546, 2005.
 
30
T. Sakurai, "Perspectives on power-aware electronics," in IEEE ISSCC, 2003, pp. 26--29.


Collaborative Colleagues:
Azad Naeemi: colleagues
James D. Meindl: colleagues