ACM Home Page
Please provide us with feedback. Feedback
A thermally-aware performance analysis of vertically integrated (3-D) processor-memory hierarchy
Full text PdfPdf (1.57 MB)
Source Annual ACM IEEE Design Automation Conference archive
Proceedings of the 43rd annual Design Automation Conference table of contents
San Francisco, CA, USA
SESSION: Session 56: beyond-the-die circuit and system integration table of contents
Pages: 991 - 996  
Year of Publication: 2006
ISBN:1-59593-381-6
Authors
Gian Luca Loi  University of California, Santa Barbara, CA
Banit Agrawal  University of California, Santa Barbara, CA
Navin Srivastava  University of California, Santa Barbara, CA
Sheng-Chih Lin  University of California, Santa Barbara, CA
Timothy Sherwood  University of California, Santa Barbara, CA
Kaustav Banerjee  University of California, Santa Barbara, CA
Sponsors
SIGDA: ACM Special Interest Group on Design Automation
ACM: Association for Computing Machinery
Publisher
ACM  New York, NY, USA
Bibliometrics
Downloads (6 Weeks): 28,   Downloads (12 Months): 123,   Citation Count: 12
Additional Information:

abstract   references   cited by   index terms   collaborative colleagues  

Tools and Actions: Request Permissions Request Permissions    Review this Article  
DOI Bookmark: Use this link to bookmark this Article: http://doi.acm.org/10.1145/1146909.1147160
What is a DOI?

ABSTRACT

Three-dimensional (3-D) integrated circuits have emerged as promising candidates to overcome the interconnect bottlenecks of nanometer scale designs. While they offer several other advantages, it is expected that the benefits from this technology can potentially be off-set by thermal considerations which impact chip performance and reliability. The work presented in this paper is the first attempt to study the performance benefits of 3-D technology under the influence of such thermal constraints. Using a processor-cache-memory system and carefully chosen applications encompassing different memory behaviors, the performance of 3-D architecture is compared with a conventional planar (2-D) design. It is found that the substantial increase in memory bus frequency and bus width contribute to a significant reduction in execution time with a 3-D design. It is also found that increasing the clock frequency translates into larger gains in system performance with 3-D designs than for planar 2-D designs in memory intensive applications. The thermal profile of the vertically stacked chip is generated taking into account the highly temperature sensitive leakage power dissipation. The maximum allowed operating frequency imposed by temperature constraint is shown to be lower for 3-D than for 2-D designs. In spite of these constraints, it is shown that the 3-D system registers large performance improvement for memory intensive applications.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
International Technology Roadmap for Semiconductors (ITRS), 2004 edition, (http://public.itrs.net/)
 
2
P. Gelsinger, 41st DAC Keynote, Design Automation Conference, 2004. (http://www.dac.com)
3
4
 
5
K. Banerjee et al. "3-D ICs: A Novel Chip Design for Improving Deep-Submicrometer Interconnect Performance and Systems-on-Chip Integration," Proc of the IEEE, Vol. 89, pp. 602-- 633, 2001.
 
6
 
7
 
8
 
9
S.A. Kuhn et al., "Performance modeling of the interconnect structure of a three-dimensional integrated RISC processor/cache system," IEEE Trans. CPMT, Part B: Adv. Packag., Vol. 19, pp. 719--727, 1996.
 
10
M.B. Kleiner et al., "Performance improvement of the memory hierarchy of RISC-systems by application of 3-D technology, "Trans. CPMT, Part B: Adv. Packaging, Vol. 19, pp. 709 -- 718, 1996.
 
11
 
12
 
13
S. Im and K. Banerjee, "Full Chip Thermal Analysis of Planar (2-D) and Vertically Integrated (3-D) High Performance ICs," IEDM, 2000, pp. 727--730.
 
14
A. Akturk et al., "Self-Consistent Modeling of Heating and MOSFET Performance in 3-D Integrated Circuits," IEEE TED, Vol. 52, pp. 2395--2403, 2005.
 
15
MicronTM 128Mb synchronous DRAM datasheet, 2001.
16
 
17
K. Nabors and J. White, "FastCap: A Multipole Accelerated 3-D Capacitance Extraction Program", IEEE TCAD, Vol. 10, pp. 1447--1459, 1991.
 
18
R. Desikan et al., "Sim-alpha: a validated execution driven alpha 21264 simulator," Technical Report TR-01-23, Department of Computer Sciences, University of Texas at Austin, 2001.
 
19
D. Burger and T. M. Austin. "The SimpleScalar Tool Set Version 2.0," Technical Report 1342, Computer Sciences Department, University of Wisconsin--Madison, 1997.
 
20
P. Shivakumar and N. Jouppi. "CACTI 3.0: An integrated cache timing, power and area model," Technical Report, Compaq WRL, 2001.
 
21
J. L. Henning, "SPEC CPU2000".
 
22
23
24
 
25
A. H. Ajami et al., "Modeling and Analysis of Non-Uniform Substrate Temperature Effects on Global ULSI Interconnects," TCAD, Vol. 24, pp. 849--861, 2005.
 
26
K. Banerjee et al., "A self-consistent junction temperature estimation methodology for nanometer scale ICs with implications for performance and thermal management," IEEE IEDM, 2003, pp. 887--890.
 
27
 
28
S-C. Lin et al., "Analysis and Implications of IC Cooling for Deep Nanometer Scale CMOS Technologies," IEEE IEDM, 2005, pp. 1041--1044.
29
 
30
Y. Zhang et al., "HotLeakage: A Temperature-Aware Model of Subthreshold and Gate Leakage for Architects," Technical Report CS-2003-05, Dept. of Computer Science, Univ. of Virginia, 2003.
31
 
32

CITED BY  12

Collaborative Colleagues:
Gian Luca Loi: colleagues
Banit Agrawal: colleagues
Navin Srivastava: colleagues
Sheng-Chih Lin: colleagues
Timothy Sherwood: colleagues
Kaustav Banerjee: colleagues