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Are carbon nanotubes the future of VLSI interconnections?
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Source Annual ACM IEEE Design Automation Conference archive
Proceedings of the 43rd annual Design Automation Conference table of contents
San Francisco, CA, USA
SESSION: Session 47: special session: more Moore's law and more than Moore's law table of contents
Pages: 809 - 814  
Year of Publication: 2006
ISBN:1-59593-381-6
Authors
Kaustav Banerjee  University of California, Santa Barbara, CA
Navin Srivastava  University of California, Santa Barbara, CA
Sponsors
SIGDA: ACM Special Interest Group on Design Automation
ACM: Association for Computing Machinery
Publisher
ACM  New York, NY, USA
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ABSTRACT

Increasing resistivity of copper with scaling and rising demands on current density requirements are driving the need to identify new wiring solutions for deep nanometer scale VLSI technologies. Metallic carbon nanotubes (CNTs) are promising candidates that can potentially address the challenges faced by copper and thereby extend the lifetime of electrical interconnects. This paper examines the state-of-the-art in CNT interconnect research and discusses both the advantages and challenges of this emerging nanotechnology.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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Collaborative Colleagues:
Kaustav Banerjee: colleagues
Navin Srivastava: colleagues