ACM Home Page
Please provide us with feedback. Feedback
ALAMO: an improved σ-space based methodology for modeling process parameter variations in analog circuits
Full text PdfPdf (160 KB)
Source Design, Automation, and Test in Europe archive
Proceedings of the conference on Design, automation and test in Europe: Proceedings table of contents
Munich, Germany
SESSION: Methods and tools for systematic analogue design table of contents
Pages: 156 - 161  
Year of Publication: 2006
ISBN:3-9810801-0-6
Authors
Hui Zhang  Stony Brook University, Stony Brook, New York
Yang Zhao  Stony Brook University, Stony Brook, New York
Alex Doboli  Stony Brook University, Stony Brook, New York
Sponsors
: The EDA Consortium
EDAA : European Design and Automation Association
IEEE-CS\DATC : The IEEE Computer Society
Publisher
European Design and Automation Association  3001 Leuven, Belgium, Belgium
Bibliometrics
Downloads (6 Weeks): 3,   Downloads (12 Months): 12,   Citation Count: 1
Additional Information:

abstract   references   cited by   collaborative colleagues  

Tools and Actions: Review this Article  

ABSTRACT

This paper describes an original methodology for accurately modeling MOSFET process parameter variations. As compared to other process parameter variation modeling methods, the proposed methodology is capable of correctly modeling not only differences of process/model parameters, but also the process parameter variations for individual devices. This capability is very important for popular analog circuits like current biasing circuits, voltage reference circuits, and single-ended output amplifiers.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
G. Gielen and R. Rutenbar. Computer-aided design of analog and mixed-signal integrated circuits. Proceedings of IEEE, 88(12):154--166, 2000.
 
2
Simon J. Lovett, Marco Welten, Alan Mathewson, and Barry Mason. Optimizing MOS transistor mismatch. IEEE Journal of Solid-state Circuits, 33(1):147--150, 1998.
 
3
4
5
 
6
Patrick Drennan and Colin McAndrew. Understanding MOSFET mismatch for analog design. IEEE Journal of Solid-State Circuits, 38(3):450--456, 2003.
 
7
 
8
Marcel Pelgrom, C. J. Duinmaijer, and Anton WelBers. Matching properties of MOS transistors. IEEE Journal of Solid-state Circuits, 24(5):1433--1440, 1989.
 
9
Ta-Hsun Yeh, Jason Lin, Shyh-Chyi Wong, Honda Huang, and Jack Sun. Mis-match characterization of 1.8v and 3.3v devices in 0.18μm mixed signal CMOS technology. In Proc. IEEE Int. Conference on Microelectronic Test Structures, 2001.
 
10
J. Bastos, M. Steyaert, B. Graindourze, and W. Sanse. Matching of MOS transistors with different layout styles. In Proc. IEEE Int. Conference on Microelectronic Test Structures, 1996.
 
11
Kadaba R. Lakshmikumar, Robert A. Hadaway, and Miles A. Copeland. Characterization and modeling of mismatch in MOS transistors for precision analog design. IEEE Journal of Solid-State Cicuits, sc-21(6):1057--1066, 1986.
 
12
Umberto Gatti and Franco Maloberti. Analog VLSI Signal and Information Processing. McGraw-Hill Inc., 1994.
 
13
F. Schenkel, M. Pronath, H. Graeb, and K. Antreich. A fast method for identifying matching-relevant transistor pairs. In Proc. IEEE Custom Integrated Circuits Conference, 2001.
 
14
Adrian Leuciuc and Yi Zhang. A highly linear low-voltage mos transconducto. In Proc. IEEE Int. Symposium on Circuits and Systems, 2002.

Collaborative Colleagues:
Hui Zhang: colleagues
Yang Zhao: colleagues
Alex Doboli: colleagues