A single photon avalanche diode array fabricated in deep-submicron CMOS technology

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A single photon avalanche diode array fabricated in deep-submicron CMOS technology

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Design, Automation, and Test in Europe archive
Proceedings of the conference on Design, automation and test in Europe: Proceedings table of contents

Munich, Germany

SESSION: Chip design records table of contents

Pages: 81 - 86

Year of Publication: 2006

ISBN:3-9810801-0-6

Authors

Cristiano Niclass	Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
Maximilian Sergio	Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
Edoardo Charbon	Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland

Sponsors

: The EDA Consortium
EDAA : European Design and Automation Association
IEEE-CS\DATC : The IEEE Computer Society

Publisher

European Design and Automation Association 3001 Leuven, Belgium, Belgium

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abstract references collaborative colleagues

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ABSTRACT

We report the first fully integrated single photon avalanche diode array fabricated in 0.35μm CMOS technology. At 25μm, the pixel pitch achieved by this design is the smallest ever reported. Thanks to the level of miniaturization enabled by this design, we were able to build the largest single photon streak camera ever built in any technology, thus proving the scalability of the technology. Applications requiring low noise, high dynamic range, and/or picosecond timing accuracies are the prime candidates of this technology. Examples include bio-imaging at cellular and molecular level, fast optical imaging, single photon telecommunications, 3D cameras, optical rangefinders, LIDAR, and low light level imagers.

REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

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Collaborative Colleagues:

Cristiano Niclass: colleagues

Maximilian Sergio: colleagues

Edoardo Charbon: colleagues

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