Standard CMOS technology on-chip inductors with pn junctions substrate isolation

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Standard CMOS technology on-chip inductors with pn junctions substrate isolation

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Asia and South Pacific Design Automation Conference archive
Proceedings of the 2005 Asia and South Pacific Design Automation Conference table of contents

Shanghai, China

SESSION: University design contest table of contents

Pages: 5 - 6

Year of Publication: 2005

ISBN:0-7803-8737-6

Authors

Hongyan Jian	Fudan University, Shanghai
Zhangwen Tang	Fudan University, Shanghai
Jie He	Fudan University, Shanghai
Jinglan He	Fudan University, Shanghai
Min Hao	Fudan University, Shanghai

Sponsors

SIGDA: ACM Special Interest Group on Design Automation
: Shanghai IC Industry Association
: IEEE SSCS Shanghai Chapter
: IEEE CAS
: IEEE Beijing Section
: Fudan University
: Chinese Institute of Electronics

Publisher

ACM New York, NY, USA

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ABSTRACT

New substrate isolation structures using pattern stacked pn junctions for on-chip inductors in standard CMOS technology are presented. For the first time, through increasing the reverse bias voltage to pn junctions, the lower substrate eddy loss due to the pn junction substrate isolation is reliably validated and the maximum quality factor is improved by 19%. The inductor without substrate shielding layer is compared to the inductor with metal one pattern ground shielding, pattern n-well, n⁺ diffusion, dual pn junctions isolation.

REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

	1	Chiaming Alex Chang, Sung-Pi Tseng, Jun Yi Chuang, Shiue-Shr Jiang, and J. Andrew Yeh, "Characterization of Spiral Inductors With Patterned Floating Structures," IEEE Transactions on Microwave Theory and Techniques, Vol.52, pp. 1375 -- 1381, 2004.
	2	Kihong Kim; O, K., "Characteristics of an integrated spiral inductor with an underlying n-well", IEEE Transactions on Electron Devices, Vol.44, pp. 1565 -- 1567, 1997.

Collaborative Colleagues:

Hongyan Jian: colleagues

Zhangwen Tang: colleagues

Jie He: colleagues

Jinglan He: colleagues

Min Hao: colleagues

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