Achieving continuous VT performance in a dual VT process

ABSTRACT

In this paper, we present a novel approach to obtain any desired intermediate threshold voltage in a dual VT process. The intermediate threshold voltages are achieved by combining low and high threshold voltages in a device. We show that this combination can be easily implemented in layouts with negligible design and manufacturing overhead. Our results show that power-delay characteristics of the achieved intermediate thresholds match well with the ideal (but impractical) scenario that assumes that all intermediate thresholds are available in the technology.

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