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Sleep transistor sizing using timing criticality and temporal currents
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Source Asia and South Pacific Design Automation Conference archive
Proceedings of the 2005 Asia and South Pacific Design Automation Conference table of contents
Shanghai, China
SESSION: Poster session II table of contents
Pages: 1094 - 1097  
Year of Publication: 2005
ISBN:0-7803-8737-6
Authors
Anand Ramalingam  The University of Texas, Austin, TX
Bin Zhang  The University of Texas, Austin, TX
Anirudh Devgan  Austin Research Laboratory, Austin, TX
David Z. Pan  The University of Texas, Austin, TX
Sponsors
SIGDA: ACM Special Interest Group on Design Automation
: Shanghai IC Industry Association
: IEEE SSCS Shanghai Chapter
: IEEE CAS
: IEEE Beijing Section
: Fudan University
: Chinese Institute of Electronics
Publisher
ACM  New York, NY, USA
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Downloads (6 Weeks): 5,   Downloads (12 Months): 35,   Citation Count: 8
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ABSTRACT

Power gating is a circuit technique that enables high performance and low power operation. One of the challenges in power gating is sizing the sleep transistor which is used to gate the power supply. This paper presents a new methodology based on timing criticality and temporal currents to size the sleep transistor. The timing criticality information and temporal current estimation are obtained using static timing analyzer. The results obtained indicate that our proposed technique results in area reduction of sleep transistors by 80% and 49% compared to module based design and cluster based design respectively.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
S. Mutoh, T. Douseki, Y. Matsuya, T. Aoki, S. Shigematsu, and J. Yamada, "1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS," IEEE Journal of Solid State Circuits, 1995.
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M. Anis, S. Areibi, and M. Elmasry, "Design and optimization of multithreshold CMOS (MTCMOS) circuits," IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2003.
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T. Sakurai and A. R. Newton, "Alpha-power law MOSFET model and its applications to CMOS inverter delay and other formulas," IEEE Journal of Solid State Circuits, 1990.
 
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CITED BY  8
Collaborative Colleagues:
Anand Ramalingam: colleagues
Bin Zhang: colleagues
Anirudh Devgan: colleagues
David Z. Pan: colleagues