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A new method for model based frugal OPC
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Source Asia and South Pacific Design Automation Conference archive
Proceedings of the 2005 Asia and South Pacific Design Automation Conference table of contents
Shanghai, China
SESSION: (Special session) DFM table of contents
Pages: 83 - 86  
Year of Publication: 2005
ISBN:0-7803-8737-6
Authors
Xiaolang Yan  Zhejiang University, Hangzhou, P. R. China
Ye Chen  Zhejiang University, Hangzhou, P. R. China
Zheng Shi  Zhejiang University, Hangzhou, P. R. China
Yue Ma  Zhejiang University, Hangzhou, P. R. China
Sponsors
SIGDA: ACM Special Interest Group on Design Automation
: Shanghai IC Industry Association
: IEEE SSCS Shanghai Chapter
: IEEE CAS
: IEEE Beijing Section
: Fudan University
: Chinese Institute of Electronics
Publisher
ACM  New York, NY, USA
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ABSTRACT

Improvements on Resolution Enhancement Technologies (RETs) enable minimum feature size of IC to shrink consistently with Moore's Law. However growing mask data volume also tremendously increases manufacture cost. The cost increase is partially due to the complicated optical proximity corrections applied on mask design. Frugal OPC methods have been introduced to reduce the complexity. In this paper, a new method for frugal OPC is presented. Based on recognition of critical spots under yield related constraints, the new correction flow keeps fidelity on critical sites while still retaining the frugality of modified designs.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
Franklin M. Schellenberg "Resolution Enhancement Technology: The Past, the Present, and Extensions for the Future", SPIE Microlithography plenary session, Feb.23, 2004
 
2
L. W. Liebmann, S. M. Mansfield, A. K. Wong, M. A. Lavin, W. C. Leipold, T. G. Dunhm, "TCAD development for lithography resolution enhancement", IBM J. RES. & DEV. Vol. 45, NO. 5, 2001
 
3
S. Murphy, Dupont Photomask, SEMATECH: Mask Supply Workshop, 2001
 
4
Chiang Yang, "Challenges of Mask Cost and Cycle Time", SEMATECH: Mask Supply Workshop, Intel, 2001
 
5
SEMATECH: Mask Supply Workshop, 2001
 
6
Artur Balasinski "Mask Cost for Sub-100 nm Technologies: Stopping A Runaway?", SPIE Vol. 5043, pp.82--92, 2003
 
7
Shih-Ying Chen, Eric C. Lynn, "Flexible fragmentation rules for next generation OPC-tag prior to fragmentation", SPIE Vol. 4691, pp. 1221--1231, 2002
 
8
Franklin M. Schellenberg "Design strategies for future lithography technologies", SPIE Vol. 5037, pp. 591--598, 2003
 
9
Maharaj Mukherjee, Vinhthuy Phan, "Improved Line-End Fore-Shortening and Corner-Rounding Control in Optical Proximity Correction using Radius of Curvature Method", SPIE, Vol.4691, 2002
 
10
Michael L. Rieger, Jeffrey P. Mayhew, Jiangwei Li, James P. Shiely, "OPC strategies to minimize mask cost and writing time", SPIE, Vol.4562, 2002
 
11
Meg Hung, Pratheep Balasingam, "Hybrid optical proximity correction concepts and results", SPIE, Vol. 4889, pp. 1173--1180, 2002
 
12
 
13
MA Yue, SHI Zheng, CHEN Ye, YAN Xiaolang, "A Content-Driven Model-Based OPC Tool", International Conference on Solid-State and Integrated-Circuit Technology, pp. 1064--1067, 2004

Collaborative Colleagues:
Xiaolang Yan: colleagues
Ye Chen: colleagues
Zheng Shi: colleagues
Yue Ma: colleagues