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ESDZapper: a new layout-level verification tool for finding critical discharging path under ESD stress
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Source Asia and South Pacific Design Automation Conference archive
Proceedings of the 2005 Asia and South Pacific Design Automation Conference table of contents
Shanghai, China
SESSION: (Special session) DFM table of contents
Pages: 79 - 82  
Year of Publication: 2005
ISBN:0-7803-8737-6
Authors
Rouying Zhan  Illinois Institute of Technology, Chicago, IL
Haolu Xie  Illinois Institute of Technology, Chicago, IL
Haigang Feng  Illinois Institute of Technology, Chicago, IL
Albert Wang  Illinois Institute of Technology, Chicago, IL
Sponsors
SIGDA: ACM Special Interest Group on Design Automation
: Shanghai IC Industry Association
: IEEE SSCS Shanghai Chapter
: IEEE CAS
: IEEE Beijing Section
: Fudan University
: Chinese Institute of Electronics
Publisher
ACM  New York, NY, USA
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Downloads (6 Weeks): 5,   Downloads (12 Months): 25,   Citation Count: 1
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ABSTRACT

On-chip ESD (electrostatic discharging) protection is a challenging IC design problem. New CAD tools are essential to ESD protection design prediction and verification at the full chip level. This paper reports a new CAD tool, entitled ESDZapper, to simulate the complex ESD protection zapping test, procedures and to find the critical discharging path under a specific ESD stress. ESDZapper is developed based on a novel concept of ESD-critical parameters. Capability of the new tool is demonstrated using a practical design example in a 0.35μm BiCMOS technology.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
A. Wang, On-Chip Protection Design for Integrated Circuits, Kluwer Academic, 2002, ISBN: 0-7923-7647-1.
 
2
A. Z. Wang, H. Feng, R. Zhan, G. Chen and Q. Wu, "ESD protection design for RF integrated circuits: new challenges", Proc. IEEE Custom Integrated Circuits Conf. (CICC), pp. 411--418, 2002.
 
3
S. Sinha, H. Swaminathan, G. Kadamati and C. Duvvury, "An automated tool for detecting ESD design errors", Proc. 20th EOS/ESD Symp., pp. 208--217, 1998.
 
4
M. Ker and J. Peng, "Layout design and verification for cell library to improve ESD/latchup reliability in deep-submicron CMOS technology", IEEE CICC, pp. 537--540, 1998.
 
5
T. Li, C. H. Tsai, E. Rosenbaum, and S. M. Kang, "Modeling, extraction and simulation of CMOS I/O circuits under ESD stress", IEEE ISCAS, pp. 389--392, 1998.
 
6
Donald B. Estreich, "The Physical and Modeling of Latch-up and CMOS Integrated Circuits", Technical Report No. G-201-9, Standford University, 1980.

Collaborative Colleagues:
Rouying Zhan: colleagues
Haolu Xie: colleagues
Haigang Feng: colleagues
Albert Wang: colleagues