| T-shaped association of transistors: modeling of multiple channel lengths and regular associations |
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Proceedings of the 18th annual symposium on Integrated circuits and system design
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Florianolpolis, Brazil
SESSION: Analog design and modeling
table of contents
Pages: 21 - 26
Year of Publication: 2005
ISBN:1-59593-174-0
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Downloads (6 Weeks): 6, Downloads (12 Months): 13, Citation Count: 2
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ABSTRACT
This work presents an analysis of a new type of composite transistor specially suited for the design of analog integrated circuits: the T-shape association of transistors. This association is composed by non-equal size unit transistors arranged in a series-parallel array with common gate, which can substitute the conventional rectangular transistors with advantages in some aspects, such as better high-frequency performance, lower output conductance and layout regularity. Dedicated tools that automatically translate the single transistors into equivalent associations without degradation in the overall circuit specifications guarantee the compatibility with the conventional analog design methodology. Some properties and applications are discussed in this paper. Experimental and simulated characteristics are shown in order to verify the behavior of the association.
REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
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CITED BY 2
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Eduardo Conrad, Junior , Fernando Paixão Cortes , Sergio Bampi , Alessandro Girardi, Early voltage and saturation voltage improvement in deep sub-micron technologies using associations of transistors, Proceedings of the 21st annual symposium on Integrated circuits and system design, September 01-04, 2008, Gramado, Brazil
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