ACM Home Page
Please provide us with feedback. Feedback
T-shaped association of transistors: modeling of multiple channel lengths and regular associations
Full text PdfPdf (795 KB)
Source SBCCI archive
Proceedings of the 18th annual symposium on Integrated circuits and system design table of contents
Florianolpolis, Brazil
SESSION: Analog design and modeling table of contents
Pages: 21 - 26  
Year of Publication: 2005
ISBN:1-59593-174-0
Authors
Alessandro Girardi  Federal University of Rio Grande do Sul, Porto Alegre-RS, Brazil
Fernando P. Cortes  Federal University of Rio Grande do Sul, Porto Alegre-RS, Brazil
Eduardo Conrad, Jr.  Federal University of Rio Grande do Sul, Porto Alegre-RS, Brazil
Sergio Bampi  Federal University of Rio Grande do Sul, Porto Alegre-RS, Brazil
Sponsors
SIGDA: ACM Special Interest Group on Design Automation
ACM: Association for Computing Machinery
Publisher
ACM  New York, NY, USA
Bibliometrics
Downloads (6 Weeks): 6,   Downloads (12 Months): 13,   Citation Count: 2
Additional Information:

abstract   references   cited by   index terms   collaborative colleagues  

Tools and Actions: Review this Article  
DOI Bookmark: Use this link to bookmark this Article: http://doi.acm.org/10.1145/1081081.1081094
What is a DOI?

ABSTRACT

This work presents an analysis of a new type of composite transistor specially suited for the design of analog integrated circuits: the T-shape association of transistors. This association is composed by non-equal size unit transistors arranged in a series-parallel array with common gate, which can substitute the conventional rectangular transistors with advantages in some aspects, such as better high-frequency performance, lower output conductance and layout regularity. Dedicated tools that automatically translate the single transistors into equivalent associations without degradation in the overall circuit specifications guarantee the compatibility with the conventional analog design methodology. Some properties and applications are discussed in this paper. Experimental and simulated characteristics are shown in order to verify the behavior of the association.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
A. Arnaud and C. Galup-Montoro. A compact model for flicker noise in MOS transistors for analog circuit design. IEEE Transactions on Electron Devices, 50(8):1815--1818, August 2003.
 
2
A. I. A. Cunha, M. C. Schneider, and C. Galup-Montoro. An MOS transistor model for analog circuit design. IEEE Journal of Solid-State Circuits, 33(10):1510--1519, October 1998.
 
3
G. V. der Plas, J. Vandenbussche, G. Gielen, and W. Sansen. A layout synthesis methodology for array-type analog blocks. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 21(6):645--661, June 2002.
 
4
P. G. Drennan and C. C. McAndrew. Understanding MOSFET mismatch for analog design. IEEE Journal of Solid-State Circuits, 38(3):450--456, March 2003.
 
5
R. Fiorelli, A. Arnaud, and C. Galup-Montoro. Series-parallel association of transistors for the reduction of random offset in non-unity gain current mirrors. In International Symposium on Circuits and Systems (ISCAS), volume 1, Vancouver, Canada, May 2004.
 
6
C. Gallup-Montoro, M. Schneider, and I. Loss. Series-parallel association of FET's for high gain and high frequency applications. IEEE Journal of Solid-State Circuits, 29(9), September 1994.
 
7
 
8
D. Integration. Smash Circuit Simulator Manual. Meylan, France, 2002.
 
9
W. Maly. Computer-aided design for VLSI circuit manufacturability. Proceedings of the IEEE, 78(2):356--392, February 1990.


Collaborative Colleagues:
Alessandro Girardi: colleagues
Fernando P. Cortes: colleagues
Eduardo Conrad, Jr.: colleagues
Sergio Bampi: colleagues