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Analysis of yield loss due to random photolithographic defects in the interconnect structure of FPGAs
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Proceedings of the 2005 ACM/SIGDA 13th international symposium on Field-programmable gate arrays table of contents
Monterey, California, USA
SESSION: New directions for programmable devices table of contents
Pages: 138 - 148  
Year of Publication: 2005
ISBN:1-59593-029-9
Authors
Nicola Campregher  Imperial College London,UK
Peter Y. K. Cheung  Imperial College London,UK
George A. Constantinides  Imperial College London,UK
Milan Vasilko  Bournemouth University, UK
Sponsors
ACM: Association for Computing Machinery
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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ABSTRACT

This paper presents an analysis of the potential yield loss in FPGA due to random defects in metal layers. A proven yield model is adapted to target the FPGA interconnect layers in order to predict the manufacturing yield. Defect parameters from the 2003 SIA roadmap are used to investigate the trend in yield loss due to defects in interconnect layers in the future. It is shown that the low yield predicted for the 45nm technology node and beyond is a cause for concern. The potential impact on yield using two different approaches, namely redundant circuits and fault tolerant design, is also presented.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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Collaborative Colleagues:
Nicola Campregher: colleagues
Peter Y. K. Cheung: colleagues
George A. Constantinides: colleagues
Milan Vasilko: colleagues