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Physical CAD changes to incorporate design for lithography and manufacturability
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Source Asia and South Pacific Design Automation Conference archive
Proceedings of the 2004 Asia and South Pacific Design Automation Conference table of contents
Yokohama, Japan
SESSION: (Special session) embedded tutorial: DFM in Nm-process generation table of contents
Pages: 768 - 773  
Year of Publication: 2004
ISBN:0-7803-8175-0
Author
Louis K. Scheffer  Cadence Design Systems, Inc., San Jose, California
Sponsors
IEICE : Institute of Electronics, Information and Communication Engineers
: IEEE Circuits and Systems Society
IPSJ : Information Processing Society of Japan
SIGDA: ACM Special Interest Group on Design Automation
Publisher
IEEE Press  Piscataway, NJ, USA
Bibliometrics
Downloads (6 Weeks): 6,   Downloads (12 Months): 35,   Citation Count: 10
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ABSTRACT

The next few process generations (65 nm and below) will have serious lithography and manufacturing constraints since the feature size is shrinking much more rapidly than the wavelengths used in manufacturing the chips. This paper starts with a quick tutorial on the Design for Manufacturability problems of these process generations, concentrating primarily on the limitations of optical lithography. The remainder of the talk covers the changes to physical design tools, such as placement and routing, that are needed to cope with these problems.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
W. Maly, "Computer-aided design for VLSI circuit manufacturability", Proceedings of IEEE, 78 (1990), pp. 356--392.
 
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L. W. Liebmann, S. M. Mansfield, A. K. Wong, M. A. Lavin, W. C. Leipold, and T. G. Dunham, "TCAD development for lithography resolution enhancement", IBM Journal of Research and Development, Volume 45, Number 5, 2001, p. 651--666.
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David Lammers and Ron Wilson, "Relaxed rules proposed for early 65-nm processes", EE Times, July 29, 2002.
 
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8
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K. Yoshida, T. Fujimaki, K. Miyamoto, T. Honma, H. Kaneko, H. Nakazawa and M. Morita, "Stress-Induced Voiding Phenomena for an Actual CMOS LSI Interconnects," International Electron Devices Meeting, 2002, pp. 753--756.
 
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Doong, K. Y. Y., Wang, R. C. J., Lin, S. C., Hung, L. J., Lee, S. Y., Chiu, C. C., Su, D., Wu, K., Young, K. L., Peng, Y. K., "Stress-induced voiding and its geometry dependency characterization", International Reliability Physics Symposium, 2003, pp. 156--160.
 
12
T. C. Huang, C. H. Yao, W. K. Wan, C. C. Hsia and M. S. Liang, "Numerical Modeling and Characterization of the Stress Migration Behavior Upon Various 90 Nanometer Cu/Low k Interconnects", IEEE International Interconnect Technology Conference, 2003, pp. 207--209.
 
13
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14
L. W. Liebmann, "Resolution enhancement techniques in optical lithography, it's not just a mask problem", Proceedings of the Society of Photo-Optical Instrumentation Engineers, 2001, pp. 23--32
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CITED BY  10