| Experimental measurement of a novel power gating structure with intermediate power saving mode |
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International Symposium on Low Power Electronics and Design
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Proceedings of the 2004 international symposium on Low power electronics and design
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Newport Beach, California, USA
SESSION: Circuit challenges for scaled technologies
table of contents
Pages: 20 - 25
Year of Publication: 2004
ISBN:1-58113-929-2
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Downloads (6 Weeks): 7, Downloads (12 Months): 77, Citation Count: 6
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ABSTRACT
A novel power gating structure is proposed for low-power, high-performance VLSI. This power gating structure supports an intermediate power saving mode as well as a traditional power cut-off mode. To evaluate our power gating structure, we design and fabricate three different macros in 0.13 um CMOS bulk technology. Our measurement results show that the additional intermediate power-mode allows us to cover various power-performance trade-off regimes, compared to conventional power gating structures.
REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
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