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Experimental measurement of a novel power gating structure with intermediate power saving mode
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International Symposium on Low Power Electronics and Design archive
Proceedings of the 2004 international symposium on Low power electronics and design table of contents
Newport Beach, California, USA
SESSION: Circuit challenges for scaled technologies table of contents
Pages: 20 - 25  
Year of Publication: 2004
ISBN:1-58113-929-2
Authors
Suhwan Kim  Seoul National Univestiy, Seoul, Korea
Stephen V. Kosonocky  IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Daniel R. Knebel  IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Kevin Stawiasz  IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Sponsors
ACM: Association for Computing Machinery
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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Downloads (6 Weeks): 26,   Downloads (12 Months): 89,   Citation Count: 6
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ABSTRACT

A novel power gating structure is proposed for low-power, high-performance VLSI. This power gating structure supports an intermediate power saving mode as well as a traditional power cut-off mode. To evaluate our power gating structure, we design and fabricate three different macros in 0.13 um CMOS bulk technology. Our measurement results show that the additional intermediate power-mode allows us to cover various power-performance trade-off regimes, compared to conventional power gating structures.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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S. Kim, S.V. Kosonocky, D.R. Knebel, K. Stawiasz, D. Heidel, and M. Immediato, "Minimizing inductive noise in system-on-a-chip with multiple power gating structures," in Proceedings of European Solid-State Circuits pp. 16--18, 2003.
 
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Collaborative Colleagues:
Suhwan Kim: colleagues
Stephen V. Kosonocky: colleagues
Daniel R. Knebel: colleagues
Kevin Stawiasz: colleagues