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System level leakage reduction considering the interdependence of temperature and leakage
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Source Annual ACM IEEE Design Automation Conference archive
Proceedings of the 41st annual Design Automation Conference table of contents
San Diego, CA, USA
SESSION: Hot leakage table of contents
Pages: 12 - 17  
Year of Publication: 2004
ISBN:1-58113-828-8
Authors
Lei He  University of California, Los Angeles, CA
Weiping Liao  University of California, Los Angeles, CA
Mircea R. Stan  University of Virginia, Charlottesville, VA
Sponsors
ACM: Association for Computing Machinery
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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Downloads (6 Weeks): 7,   Downloads (12 Months): 44,   Citation Count: 15
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ABSTRACT

The high leakage devices in nanometer technologies as well as the low activity rates in system-on-a-chip (SOC) contribute to the growing significance of leakage power at the system level. We first present system-level leakage-power modeling and characteristics and discuss ways to reduce leakage for caches. Considering the interdependence between leakage power and temperature, we then discuss thermal runaway and dynamic power and thermal management (DPTM) to reduce power and prevent thermal violations. We show that a thermal-independent leakage model may hide actual failures of DPTM. Finally, we present voltage scaling considering DPTM for different packaging options. We show that the optimal Vdd for the best throughput may be smaller than the largest Vdd allowed by the given packaging platform, and that advanced cooling techniques can improve throughput significantly.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
A. Agarwal et al., DAC, 2004.
 
2
 
3
A. S. Grove. International Electron Devices Meeting, Dec 2002.
 
4
L. He, W. Liao and M. Stan, System Level Leakage Reduction Considering Leakage and Thermal Interdependency. Technical Report, UCLA, http://eda.ee.ucla.edu/publications.html, 2004.
 
5
S. Mutoh et al. IEEE J. of Solid-State Circuits, 1995.
 
6
J. Butts and G. Sohi, MICRO'33, 2000.
 
7
K. Skadron et al University of Virginia, Department of Computer Science Technical Report, 2003.
 
8
W. Liao et al. ICCAD, 2002.
 
9
K. Kumagai et al. Symposium on VLSI Circuits, 1998.
 
10
W. Liao et al. ISLPED, 2003.
 
11
S.-H. Yang et al. HPCA, 2001.
 
12
D. Albonesi. MICRO'32, 1999.
 
13
K. Flautner et al. ISCA, 2002.
 
14
H. Zhou et al. IEEE PACT, 2001.
 
15
S. Velusamy et al. Workshop on Memory Performance Issues, in conjunction with ISCA-29, 2002.
 
16
K. Skadron et al. ISCA, 2003
 
17
W. Huang et al. DAC, 2004.
 
18
W. Liao and L. He, The 3rd Workshop on Power-Aware Computer Systems, 2003.
 
19
"well-tempered" bulk-si NMOSFET device home page, in http://www-mtl.mit.edu/Well/.
 
20
H. Su et al. ISLPED, 2003.
 
21
R. Severns, Siliconix applications note AN83-10, 1983.
 
22
V. Tiwari et al. DAC, 1998.
 
23
D. Brooks and M. Martonosi, HPCA, 2001.
 
24
K. Skadron et al. HPCA, 2002.
 
25
M. Huang et al. MICRO'33, 2000
 
26
S. Heo et al. ISLPED, 2003.
 
27
C.-H. Lim et al. ISQED, 2002.
 
28
 
29
A. Vassighi et al. DAC, 2004.
 
30
R. Cobbold, Electronic Letters, 1966.
 
31
H. B. Bakoglu, Circuits, Interconnections, and Packaging for VLSI. Addison-Wesley, 1990.
 
32
M. Shaw et al. 8th Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, 2002.

CITED BY  15
 
 
 
 
 
 

Collaborative Colleagues:
Lei He: colleagues
Weiping Liao: colleagues
Mircea R. Stan: colleagues