ACM Home Page
Please provide us with feedback. Feedback
A CAD Framework for Co-Design and Analysis of CMOS-SET Hybrid Integrated Circuits
Full text PdfPdf (239 KB)
Source International Conference on Computer Aided Design archive
Proceedings of the 2003 IEEE/ACM international conference on Computer-aided design table of contents
Page: 497  
Year of Publication: 2003
ISBN ~ ISSN:1092-3152 , 1-58113-762-1
Authors
Santanu Mahapatra  Swiss Federal Institute of Technology Lausanne (EPFL), Switzerland
Kaustav Banerjee  University of California Santa Barbara, CA
Florent Pegeon  Silvaco Data Systems, France
Adrian Mihai Ionescu  Swiss Federal Institute of Technology Lausanne (EPFL), Switzerland
Sponsor
SIGDA: ACM Special Interest Group on Design Automation
Publisher
IEEE Computer Society  Washington, DC, USA
Bibliometrics
Downloads (6 Weeks): 7,   Downloads (12 Months): 29,   Citation Count: 1
Additional Information:

abstract   references   cited by   index terms   collaborative colleagues  

Tools and Actions: Review this Article  
DOI Bookmark: 10.1109/ICCAD.2003.2

ABSTRACT

This paper introduces a CAD framework for co-simulation ofhybrid circuits containing CMOS and SET (Single ElectronTransistor) devices. An improved analytical model for SET is alsoformulated and shown to be applicable in both digital and analogdomains. Particularly, the extension of the recent MIB model forsingle/multi gate symmetric/asymmetric device for a wide range ofdrain to source voltage and temperature is addressed. Circuit levelco-simulations are successfully performed by implementing theSET analytical model in Analog Hardware Description Language(AHDL) of a professional circuit simulator SMARTSPICE.Validation at device and circuit level is carried out by Monte-Carlosimulations. Some novel functionality hybrid CMOS-SETcircuit characteristics: (i) SET neuron (ii) Multiple valued logiccircuit and (iii) a new Negative Differential Resistance (NDR)circuit, are also predicted by the proposed SET model andanalyzed using the new hybrid simulator.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
[1] The International Technology Roadmap for Semiconductors (ITRS), 2002 Edition.
 
2
[2] J. A. Hutchby, et al., "Extending the road beyond CMOS," IEEE Circuits and Devices Magazine, Volume: 18 Issue: 2, pp. 28-41, March 2002.
3
4
 
5
[5] S. Mahapatra, A.M. Ionescu, K. Banerjee, M.J. Declerq, "Modelling and analysis of power dissipation in single electron logic", Technical Digest of IEDM 2002.
 
6
[6] K. Uchida, J. Koga, R. Ohba, A. Toriumi, "Programmable single-electron transistor logic for low-power intelligent Si LSI", ISSCC 2002, Vol. 2, pp. 162-453.
 
7
[7] H. Inokawa, A. Fujiwara, Y. Takahashi, "A multiple-valued logic with merged single-electron and MOS transistors" IEDM 2001, pp. 147-150.
 
8
[8] M. Goossens, "Analog neural networks in single-electron tunneling technology", Delft University Press, Nederlands.
 
9
[9] C. Wasshuber, "Computational Electronics", Springer Verlag, New York.
 
10
[10] Y. Ono and Y. Takahashi, " Single electron pass transistor logic and its application to a binary adder", Symposium on VLSI Circuits 2001, pp. 63-66.
 
11
[11] C. P. Heij, D. C. Dixon, P. Hadley and J. E. Mooij, "Negative differential resistance due to single-electron switching", Applied Phys. Lett., Vol. 74, No. 7, pp. 1042-1044, 1999.
 
12
[12] R. H. Chen, A. N. Korotkov, and K. K. Likharev, "A new logic family based on single-electron transistors", Device Research Conference, pp. 44-45, 1995.
 
13
[13] KOSEC(KOrea Single Electron Circuit simulator) is developed in Nanoelectronics Laboratory, Korea University, Seoul, Korea.
 
14
[14] http://hana.physics.sunysb.edu/set/software
 
15
[15] M. Fujishima, S. Amakawa and K. Hoh, "Circuit simulators aiming at single-electron integration", Jpn. J. Appl. Phys., Vol. 37, pp. 1478- 1482, 1998.
 
16
[16] Y. S. Yu, S. W. Hwang, and D. Ahn, "Macromodeling of single electron transistors for efficient circuit simulation", IEEE Trans. Electron Devices, Vol. 46, No. 8, pp. 1667-1671, 1999.
 
17
[17] S. Mahapatra, A.M. Ionescu, K. Banerjee, "A quasi-analytical SET model for few electron circuit simulation", IEEE Electron Dev. Lett., Vol. 23, No. 6, pp. 366-368, 2002.
 
18
[18] K. Uchida, K. Matsuzawa, J. Koga, R. Ohba, S. Takagi, and A. Toriumi, "Analytical single-electron transistor (SET) model for design and analysis of realistic SET circuits", Jpn. J. Appl. Phys., Vol. 39, Part 1, No. 4B, pp. 2321-2324, 2000.
 
19
[19] SMARTSPICE User Manual, SILVACO Inc., www.silvaco.com
 
20
[20] M. Kirihara, N. Kuwamura, K. Taniguchi and C. Hamaguchi: Ext. Abst. 1994 Int. Conf. Solid State Devices and Materials (Business Center for Academic Socities Japan, Tokyo, 1994), pp. 328.
 
21
[21] Ongoing research in authors' group.
 
22
[22] A. Hajimiri, T. H. Lee, "The design of low noise oscillators", Kluwer academic publishers, 1999, Boston, USA.


Collaborative Colleagues:
Santanu Mahapatra: colleagues
Kaustav Banerjee: colleagues
Florent Pegeon: colleagues
Adrian Mihai Ionescu: colleagues