|
ABSTRACT
This paper introduces a CAD framework for co-simulation ofhybrid circuits containing CMOS and SET (Single ElectronTransistor) devices. An improved analytical model for SET is alsoformulated and shown to be applicable in both digital and analogdomains. Particularly, the extension of the recent MIB model forsingle/multi gate symmetric/asymmetric device for a wide range ofdrain to source voltage and temperature is addressed. Circuit levelco-simulations are successfully performed by implementing theSET analytical model in Analog Hardware Description Language(AHDL) of a professional circuit simulator SMARTSPICE.Validation at device and circuit level is carried out by Monte-Carlosimulations. Some novel functionality hybrid CMOS-SETcircuit characteristics: (i) SET neuron (ii) Multiple valued logiccircuit and (iii) a new Negative Differential Resistance (NDR)circuit, are also predicted by the proposed SET model andanalyzed using the new hybrid simulator.
REFERENCES
Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.
| |
1
|
[1] The International Technology Roadmap for Semiconductors (ITRS), 2002 Edition.
|
| |
2
|
[2] J. A. Hutchby, et al., "Extending the road beyond CMOS," IEEE Circuits and Devices Magazine, Volume: 18 Issue: 2, pp. 28-41, March 2002.
|
 |
3
|
|
 |
4
|
Adrian M. Ionescu , Michel J. Declercq , Santanu Mahapatra , Kaustav Banerjee , Jacques Gautier, Few electron devices: towards hybrid CMOS-SET integrated circuits, Proceedings of the 39th conference on Design automation, June 10-14, 2002, New Orleans, Louisiana, USA
[doi> 10.1145/513918.513943]
|
| |
5
|
[5] S. Mahapatra, A.M. Ionescu, K. Banerjee, M.J. Declerq, "Modelling and analysis of power dissipation in single electron logic", Technical Digest of IEDM 2002.
|
| |
6
|
[6] K. Uchida, J. Koga, R. Ohba, A. Toriumi, "Programmable single-electron transistor logic for low-power intelligent Si LSI", ISSCC 2002, Vol. 2, pp. 162-453.
|
| |
7
|
[7] H. Inokawa, A. Fujiwara, Y. Takahashi, "A multiple-valued logic with merged single-electron and MOS transistors" IEDM 2001, pp. 147-150.
|
| |
8
|
[8] M. Goossens, "Analog neural networks in single-electron tunneling technology", Delft University Press, Nederlands.
|
| |
9
|
[9] C. Wasshuber, "Computational Electronics", Springer Verlag, New York.
|
| |
10
|
[10] Y. Ono and Y. Takahashi, " Single electron pass transistor logic and its application to a binary adder", Symposium on VLSI Circuits 2001, pp. 63-66.
|
| |
11
|
[11] C. P. Heij, D. C. Dixon, P. Hadley and J. E. Mooij, "Negative differential resistance due to single-electron switching", Applied Phys. Lett., Vol. 74, No. 7, pp. 1042-1044, 1999.
|
| |
12
|
[12] R. H. Chen, A. N. Korotkov, and K. K. Likharev, "A new logic family based on single-electron transistors", Device Research Conference, pp. 44-45, 1995.
|
| |
13
|
[13] KOSEC(KOrea Single Electron Circuit simulator) is developed in Nanoelectronics Laboratory, Korea University, Seoul, Korea.
|
| |
14
|
[14] http://hana.physics.sunysb.edu/set/software
|
| |
15
|
[15] M. Fujishima, S. Amakawa and K. Hoh, "Circuit simulators aiming at single-electron integration", Jpn. J. Appl. Phys., Vol. 37, pp. 1478- 1482, 1998.
|
| |
16
|
[16] Y. S. Yu, S. W. Hwang, and D. Ahn, "Macromodeling of single electron transistors for efficient circuit simulation", IEEE Trans. Electron Devices, Vol. 46, No. 8, pp. 1667-1671, 1999.
|
| |
17
|
[17] S. Mahapatra, A.M. Ionescu, K. Banerjee, "A quasi-analytical SET model for few electron circuit simulation", IEEE Electron Dev. Lett., Vol. 23, No. 6, pp. 366-368, 2002.
|
| |
18
|
[18] K. Uchida, K. Matsuzawa, J. Koga, R. Ohba, S. Takagi, and A. Toriumi, "Analytical single-electron transistor (SET) model for design and analysis of realistic SET circuits", Jpn. J. Appl. Phys., Vol. 39, Part 1, No. 4B, pp. 2321-2324, 2000.
|
| |
19
|
[19] SMARTSPICE User Manual, SILVACO Inc., www.silvaco.com
|
| |
20
|
[20] M. Kirihara, N. Kuwamura, K. Taniguchi and C. Hamaguchi: Ext. Abst. 1994 Int. Conf. Solid State Devices and Materials (Business Center for Academic Socities Japan, Tokyo, 1994), pp. 328.
|
| |
21
|
[21] Ongoing research in authors' group.
|
| |
22
|
[22] A. Hajimiri, T. H. Lee, "The design of low noise oscillators", Kluwer academic publishers, 1999, Boston, USA.
|
CITED BY
|
Changyun Zhu , Zhenyu (Peter) Gut , Li Shang , Robert P. Dick , Robert G. Knobel, Towards an ultra-low-power architecture using single-electron tunneling transistors, Proceedings of the 44th annual conference on Design automation, June 04-08, 2007, San Diego, California
|
|