An accurate grid local truncation error for device simulation

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An accurate grid local truncation error for device simulation

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International Conference on Computer Aided Design archive
Proceedings of the 1993 IEEE/ACM international conference on Computer-aided design table of contents

Santa Clara, California, United States

Pages: 275 - 282

Year of Publication: 1993

ISBN:0-8186-4490-7

Authors

Mi-Chang Chang	Semiconductor Process and Design Center, Texas Instruments Inc.
Jue-Hsien Chern	Semiconductor Process and Design Center, Texas Instruments Inc.
Ping Yang	Semiconductor Process and Design Center, Texas Instruments Inc.

Sponsors

IEEE-CS : Computer Society
SIGDA: ACM Special Interest Group on Design Automation

Publisher

IEEE Computer Society Press Los Alamitos, CA, USA

Bibliometrics

Downloads (6 Weeks): 3, Downloads (12 Months): 12, Citation Count: 0

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REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

	1	C.H. Price, "Two dimensional numerical simulation of semiconductor devices," Ph.D. thesis, Stanford University, Stanford, California, May 1982.
	2	S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer-Verlag, Wien New York, 1984.
	3	G. F. Carey, Grid Generation, refinement and redistribution, Univ. of Texas at Austin, 1992.
	4	J.F. Burgler, W.M. Coughran, Jr., and W. Fiehtner, "An adaptive 8rid refinement stratesy for the drift-diffusion equations," IEEE Trans. Computer-Aided Design, Vol. 10, No. 10, Oct. 1991, pp. 1251 - 1258.
	5	W.M. Coughran, Jr., M.R. Pinto, R.K. Smith, "Adaptive grid generation for VLSI device simulation," IEEE Trans. Computer-Aided Design, Vol. 10, No. 10, Oct. 1991, pp. 1259- 1275.
	6	R.E. Bank, D.J. Rose, and W. Fichtner, "Numerical methods for semiconductor device simulation," IEEE Trans. Electron Devices, Vol. ED-30, Sept. 1983, pp. 1031-1041.
	7	R.E. Bank and A. Weiser, "Some a posteriori error estimators for elliptic partial differential equations," Math. Comp., Vol. 44, no. 170, April 1985, pp. 283-301.
	8	J.T. Watt, "Inversion layer mobility: characterization, modeling and simulation," SRC Technical Review, Design Sciences, Stanford University, Mar 1989.
	9	D.L. Seharfetter and H.K. Gummel, "Large-signal analysis of a silicon read diode oscillator," IEEE Trans. Electron Devices, 16, 1969, p. 64.

Collaborative Colleagues:

Mi-Chang Chang: colleagues

Jue-Hsien Chern: colleagues

Ping Yang: colleagues

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