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Increasing minimum operating voltage (VDDmin) with number of CMOS logic gates and experimental verification with up to 1Mega-stage ring oscillators
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International Symposium on Low Power Electronics and Design archive
Proceeding of the thirteenth international symposium on Low power electronics and design table of contents
Bangalore, India
SESSION: Low voltage logic and memory table of contents
Pages 117-122  
Year of Publication: 2008
ISBN:978-1-60558-109-5
Authors
Taro Niiyama  University of Tokyo, Tokyo, Japan
Zhe Piao  University of Tokyo, Tokyo, Japan
Koichi Ishida  University of Tokyo, Tokyo, Japan
Masami Murakata  STARC, Yokohama, Japan
Makoto Takamiya  University of Tokyo, Tokyo, Japan
Takayasu Sakurai  University of Tokyo, Tokyo, Japan
Sponsors
ACM: Association for Computing Machinery
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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ABSTRACT

In order to explore the feasibility of the large scale subthreshold logic circuits and to clarify the lower limit of supply voltage (VDD) for logic circuits, the dependence of minimum operating voltage (VDDmin) of CMOS logic gates on the number of stages, gate types and gate width is systematically measured with 90-nm CMOS ring oscillators (RO's). The measured average VDDmin of inverter RO's increased from 90 mV to 343 mV when the number of RO stages increased from 11 to 1Mega, which indicates the difficulty of the VDD scaling in the large scale subthreshold logic circuits. The dependence of VDDmin on the number of stages is calculated with the subthreshold current model with random threshold voltage (VTH) variations and compared with the measured results, which confirm the tendency of the measurement.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
H. Kaul, M. Anders, S. Mathew, S. Hsu, A. Agarwal, R. Krishnamurthy, and S. Borkar, "A 320mV 56μW 411GOPS/Watt ultra-low voltage motion estimation accelerator in 65nm CMOS," IEEE International Solid-State Circuits Conference, pp. 316--317, Feb. 2008.
 
2
I. Chang, J. Kim, S. Park, and K. Roy, "A 32kb 10T Subthreshold SRAM Array with Bit-Interleaving and Differential Read Scheme in 90nm CMOS," IEEE International Solid-State Circuits Conference, pp. 388--389, Feb. 2008.
 
3
B. Calhoun, and A. Chandrakasan, "Ultra-dynamic voltage scaling (UDVS) using sub-threshold operation and local voltage dithering," IEEE Journal of Solid-State Circuits, Vol. 41, No. 1, pp. 238--245, Jan. 2006.
 
4
S. Hanson, B. Zhai, M. Seok, B. Cline, K. Zhou, M. Singhal, M. Minuth, J. Olson, L. Nazhan-dali, T. Austin, D. Sylvester, and D. Blaauw, "Performance and variability optimization strategies in a sub-200mV, 3.5pJ/inst, 11nW subthreshold processor," IEEE Symposium on VLSI Circuits, pp. 152--153, June 2007.
 
5
M. Hwang, A. Raychowdhury, K. Kim, and K. Roy, "A 85mV 40nW process-tolerant subthreshold 8x8 FIR filter in 130nm technology," IEEE Symposium on VLSI Circuits, pp. 154--155, June 2007.
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Collaborative Colleagues:
Taro Niiyama: colleagues
Zhe Piao: colleagues
Koichi Ishida: colleagues
Masami Murakata: colleagues
Makoto Takamiya: colleagues
Takayasu Sakurai: colleagues