ACM Home Page
Please provide us with feedback. Feedback
A functionality-directed clustering technique for low-power MTCMOS design—computation of simultaneously discharging current
Full text PdfPdf (534 KB)
Source
ACM Transactions on Design Automation of Electronic Systems (TODAES) archive
Volume 12 ,  Issue 3  (August 2007) table of contents
Article No. 30  
Year of Publication: 2007
ISSN:1084-4309
Authors
Ang-Chih Hsieh  National Tsing Hua University, Hsinchu, Taiwan, R. O. C.
Tzu-Teng Lin  National Tsing Hua University, Hsinchu, Taiwan, R. O. C.
Tsuang-Wei Chang  National Tsing Hua University, Hsinchu, Taiwan, R. O. C.
Tingting Hwang  National Tsing Hua University, Hsinchu, Taiwan, R. O. C.
Publisher
ACM  New York, NY, USA
Bibliometrics
Downloads (6 Weeks): 2,   Downloads (12 Months): 48,   Citation Count: 1
Additional Information:

abstract   references   cited by   index terms   collaborative colleagues  

Tools and Actions: Request Permissions Request Permissions    Review this Article  
DOI Bookmark: Use this link to bookmark this Article: http://doi.acm.org/10.1145/1255456.1255467
What is a DOI?

ABSTRACT

Multithreshold CMOS (MTCMOS) is a circuit style that can effectively reduce leakage power consumption. Sleep transistor sizing is the key issue when a MTCMOS circuit is designed. If the size of sleep transistor is large enough, the circuit performance can surely be maintained but the area and dynamic power consumption of the sleep transistor may increase. On the other hand, if the sleep transistor size is too small, there will be significant performance degradation because of the increased resistance to ground. Previous approaches [Kao et al. 1998; Anis et al. 2002] to designing sleep transistor size are based mainly on mutually-exclusive discharge patterns. However, these approaches considered only the topology of a circuit (i.e., interconnections of nodes in the circuit-graph saving the functionality of node). We observed that any two possible simultaneously switching gates may not discharge at the same time in terms of functionality. Thus, we propose an algorithm to determine how to cluster cells to share sleep transistors, while taking both topology and functionality into consideration. Moreover, one placement refinement algorithm that takes clustering information into account will be presented. At the logic level, the results show that the proposed clustering method can achieve an average of 22% reduction in terms of the number of unit-size sleep transistors as compared to a method that does not consider functionality. At the physical level, two placement results are discussed. The first is produced by a traditional placement tool plus topology check (functionality check) for insertion of sleep transistors. It shows that the functionality check algorithm produces 9% less chip area as compared with the topology check algorithm. The second result is produced by a placement refinement algorithm where the initial placement is done in the first placement experiment. It shows that the placement refinement algorithm achieves 5% more reduction in area at the expense of 4% increase in wire length. Totally, around 14% reduction is achieved by utilizing the clustering information.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

1
2
 
3
BSIM3. 2007. BSIM3 homepage. http://www-device.eecs.berkeley.edu~bsim3/arch_ftp.html.
 
4
 
5
6
7
8
 
9
Kriplani, H., Najm, F. N., and Hajj, I. N. 1995. Pattern independent maximum current estimation in power and ground buses of CMOS VLSI circuits: Algorithms, signal correlations, and their resolution. IEEE Trans. Comput. Aided Des. Integrated Circ. Syst. 998--1012.
 
10
11
12
 
13
Muth, S., Douseki, T., Matsuya, T., Aoki, T., Shigematsu, S., and Yamada, J. 1995. 1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS. IEEE J. Solid-State Circ. 30, 8 (Feb.), 847--853.
 
14
 
15
16


Collaborative Colleagues:
Ang-Chih Hsieh: colleagues
Tzu-Teng Lin: colleagues
Tsuang-Wei Chang: colleagues
Tingting Hwang: colleagues