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Charge recycling in MTCMOS circuits: concept and analysis
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Source Annual ACM IEEE Design Automation Conference archive
Proceedings of the 43rd annual Design Automation Conference table of contents
San Francisco, CA, USA
SESSION: Session 8: leakage, power analysis and optimization table of contents
Pages: 97 - 102  
Year of Publication: 2006
ISBN:1-59593-381-6
Authors
Ehsan Pakbaznia  University of Southern California
Farzan Fallah  Fujitsu Labs of America
Massoud Pedram  University of Southern California
Sponsors
SIGDA: ACM Special Interest Group on Design Automation
ACM: Association for Computing Machinery
Publisher
ACM  New York, NY, USA
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ABSTRACT

Designing an energy efficient power gating structure is an important and challenging task in Multi-Threshold CMOS (MTCMOS) circuit design. In order to achieve a very low power design, the large amount of energy consumed during mode transition in MTCMOS circuits should be avoided. In this paper, we propose an appropriate charge recycling technique to reduce energy consumption during the mode transition of MTCMOS circuits. The proposed method can save up to 46% of the mode transition energy while, in most cases, maintaining, or even improving, the wake up time of the original circuit. It also reduces the peak negative voltage value and the settling time of the ground bounce.


REFERENCES

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Collaborative Colleagues:
Ehsan Pakbaznia: colleagues
Farzan Fallah: colleagues
Massoud Pedram: colleagues