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An up-stream design auto-fix flow for manufacturability enhancement
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Source Annual ACM IEEE Design Automation Conference archive
Proceedings of the 43rd annual Design Automation Conference table of contents
San Francisco, CA, USA
SESSION: Session 5: practical applications of DFM table of contents
Pages: 73 - 76  
Year of Publication: 2006
ISBN:1-59593-381-6
Authors
Jie Yang  Advanced Micro Devices, Austin, TX
Ethan Cohen  Advanced Micro Devices, Austin, TX
Cyrus Tabery  Advanced Micro Devices, Austin, TX
Norma Rodriguez  Advanced Micro Devices, Austin, TX
Mark Craig  Advanced Micro Devices, Austin, TX
Sponsors
SIGDA: ACM Special Interest Group on Design Automation
ACM: Association for Computing Machinery
Publisher
ACM  New York, NY, USA
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Downloads (6 Weeks): 3,   Downloads (12 Months): 18,   Citation Count: 1
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ABSTRACT

Although many physical limitations have been reached in modern micro-lithography, printed critical dimensions continue to shrink according to the International Technology Roadmap for Semiconductors (ITRS) [1]. To meet the demands imposed by this guideline, the traditional separation between design and manufacturing communities is being bridged. Many EDA tools package manufacturing data for delivery into established simulation engines for design verification. However, none of them provide practical implementations of design optimizations at an early stage in the design flow.This paper presents an automated layout modification flow for metal layers with the goal of enhancing manufacturability. It can easily be deployed in a current custom design flow in a way that is visible to designers. The result of this scheme is improvements to process windows and yield, while minimizing circuit performance detractors. The flow is verified through analyses of both the impact on circuit performance and the benefit to manufacturability. It has been implemented in a state-of-the-art 65 nm chip design. Both silicon yield and electrical performance data are currently being collected and analyzed.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
1
International Technology Roadmap for Semiconductors, 2004 update. http://public.itrs.net/.
 
2
Chris Spence, "Mask Data Preparation Issues for the 90nm Node: OPC Becomes a Critical Manufacturing Technology", Future Fab Intl. Volume 16, 2004, pp. 77--79.
 
3
S. R. Nassif, "Modeling and Forecasting of Manufacturing Variations", Proc. Fifth International Workshop on Statistical Metrology, 2000, pp. 3--10.
 
4
M. Orshansky, et al., "Characterization of Spatial Intrafield Gate CD Variability, Its Impact on Circuit Performance, and Spatial Mask-Level Correction", IEEE Transactions on Semiconductor Manufacturing, 17(1), 2004, pp. 2--11.
 
5
A. B. Agrawal, et al., "Statistical timing analysis using bounds and selective enumeration", Proc. Design Automation Conference, 2003, pp. 348--353.
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Collaborative Colleagues:
Jie Yang: colleagues
Ethan Cohen: colleagues
Cyrus Tabery: colleagues
Norma Rodriguez: colleagues
Mark Craig: colleagues