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High-level synthesis using computation-unit integrated memories
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Proceedings of the 2004 IEEE/ACM International conference on Computer-aided design table of contents
Pages: 783 - 790  
Year of Publication: 2004
ISBN:0-7803-8702-3
Authors
Chao Huang  Dept. of Electr. Eng., Princeton Univ., NJ, USA
S. Ravi  Sch. of Comput., National Univ. of Singapore, Singapore
A. Raghunathan  Sch. of Comput., National Univ. of Singapore, Singapore
N. K. Jha  Dept. of Inf. & Comput. Sci., Linkoping Univ., Sweden
Publisher
IEEE Computer Society  Washington, DC, USA
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DOI Bookmark: 10.1109/ICCAD.2004.1382682

ABSTRACT

High-level synthesis (HLS) of memory-intensive applications has featured several innovations in terms of enhancements made to the basic memory organization and data layout. However, increasing performance and energy demands faced by application-specific integrated circuits (ASIC) are forcing designers to alter the fundamental architectural template of the HLS output, namely, a controller-datapath associated with a memory subsystem (monolithic, banked, etc.). We propose an architectural template for the HLS output that consists of a controller-datapath circuit associated with a memory subsystem into which computation units have been integrated. The enhanced memory subsystem is called computation-unit integrated memory (CIM). A CIM offers higher memory bandwidth (relative to what is offered through the system bus) to computation units present locally within it and reduces the overall communication between the memory subsystem and the controller-datapath, thus providing a template highly suitable for deriving efficient implementations of memory-intensive applications. This work addresses the challenge of providing an automatic synthesis framework for a CIM-based architecture. Our framework can analyze the various trade-offs involved in selecting suitable operations in a behavior for execution using a CIM and generate a high-performance, low-overhead implementation. Experiments with several behaviors indicate that an average performance improvement of 1.88/spl times/ (a maximum of 2.63/spl times/) is possible with very low area overheads. The energy-delay product improves by an average of 2.1/spl times/ (maximum of 3.4/spl times/).


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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Collaborative Colleagues:
Chao Huang: colleagues
S. Ravi: colleagues
A. Raghunathan: colleagues
N. K. Jha: colleagues