Fundamentals of next generation compact MOSFET models

ABSTRACT

It has recently become clear that the electronics industry is turning away from source-referenced, threshold voltage based MOSFET models. The two main approaches as candidates to replace BSIM-type models are inversion-charge and surface-potential models. This paper provides an overview of the basic physics that must be modeled to build a compact model for the MOSFET and compares the two approaches taken by the developers of next generation models.

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INDEX TERMS

Primary Classification:
  B. Hardware
  B.7 INTEGRATED CIRCUITS
      B.7.2 Design Aids
          Subjects: Simulation

General Terms:
Design, Performance

Keywords:
MOSFET model, compact model, inversion-charge model, surface potential model