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Interconnect and current density stress: an introduction to electromigration-aware design
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Source International Workshop on System-Level Interconnect Prediction archive
Proceedings of the 2005 international workshop on System level interconnect prediction table of contents
San Francisco, California, USA
SESSION: Design issues for interconnect table of contents
Pages: 81 - 88  
Year of Publication: 2005
ISBN:1-59593-033-7
Author
Jens Lienig  Dresden University of Technology, Dresden, Germany
Sponsors
ACM: Association for Computing Machinery
SIGDA: ACM Special Interest Group on Design Automation
Publisher
ACM  New York, NY, USA
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ABSTRACT

Electromigration due to excessive current density stress in the interconnect can cause the premature failure of an electronic circuit. The ongoing reduction of circuit feature sizes has aggravated the problem over the last couple of years. It is therefore an important reliability issue to consider electromigration-related design parameters during interconnect design. In this tutorial, we give an introduction to the electromigration problem and its relationship to current density. We then present various physical design constraints that affect electromigration. Finally, we introduce components of an electromigration-aware physical design flow.


REFERENCES

Note: OCR errors may be found in this Reference List extracted from the full text article. ACM has opted to expose the complete List rather than only correct and linked references.

 
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