Design of RF CMOS low noise amplifiers using a current based MOSFET model

ABSTRACT

This paper presents a design methodology for RF CMOS Low Noise Amplifiers (LNA). This methodology uses a current-based MOSFET model, which allows a detailed analysis of an LNA for all MOSFET's inversion regions. Design equations, including the induced gate noise in MOS devices are also presented and a design example with simulation results is shown.

REFERENCES

• 1: A.N. Karanicolas, "A 2,7 V 900 MHZ CMOS LNA and mixer"in ISSCC Dig.Tech. Papers, 1996, vol. 39, pp 50--51.
• 2: D.K Schaeffer and T. H. Lee, "A 1,5-V, 1,5-GHz CMOS Low Noise Amplifier", IEEE J. Solid-State Circuits, vol 32, pp 745--759, May 1997.
• 3: Gatta Francesco el al. "A 2 dB Noise Figure 900MHz Differential CMOS LNA" IEEE J. Solid-State Circuits, vol 36 n 10 Oct. 2001
• 4: C. Galup-Montoro , M.C. Schneider and A.I.A. Cunha "A current-based MOSFET model for integrated circuit design", Chapter 2 in Low-Voltage/Low Power Integraed Circuits and Systems, Edited by E. Sánchez-Sinencio and A.C. Andreou, pp. 7--55 IEE Press, New Jersey, 1999.
• 5: T.H. Lee, "The Design of CMOS Radio-Frequency Integrated Circuits"Cambridge University Press, United States of America, 1998.

INDEX TERMS

Primary Classification:
  B. Hardware
  B.7 INTEGRATED CIRCUITS
      B.7.1 Types and Design Styles

General Terms:
Design, Theory

Keywords:
CMOS, LNA, RF, noise